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Transistors - Bipolar - Pre-Biased
PDTD123ES,126 Picture

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PDTD123ES,126

  • NXP USA Inc.
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  • TRANS PREBIAS NPN 500MW TO92-3
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In Stock:20,022(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Box (TB)
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
500 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Other
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