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Transistors - Bipolar - Pre-Biased
PDTC114YS,126 Picture

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PDTC114YS,126

  • NXP USA Inc.
  • New
  • TRANS PREBIAS NPN 500MW TO92-3
  • Datasheet download
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In Stock:18,950(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Box (TB)
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
-
Power - Max
500 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Other
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Inductor/Filter/Beads: Murata, TAIYO, SUNLORD, FengHua

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