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Transistors - Bipolar - Pre-Biased
PDTC114EMB,315 Picture

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PDTC114EMB,315

  • NXP Semiconductors
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  • PDTC114EMB - UPN RESISTOR-EQUIPP
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In Stock:192,346(Ref. price)
Qty.Unit PriceExt. Price
1
$0.01980
$0.01980
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
230 MHz
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Supplier Device Package
DFN1006B-3
Other
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